Search results for "Exoelectron emission"
showing 9 items of 9 documents
Thermal stability and crystallization kinetics of Al4Mn quasicrystals as studied by exoelectron emission and DTA methods
1995
Effect of gamma radiation on thermostimulated exoelectron emission from Gd2O3 films
2020
Abstract The effect of gamma irradiation on Gd2O3 films was studied using the thermostimulated exoelectron emission (TSEE) technique. The films were deposited on a glass and Si/SiO2 substrates using an extraction-pyrolytic method. Crystalline structure, chemical composition, film thickness and surface morphology were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films were irradiated by 10 MeV gamma photons and TSEE was measured from the irradiated films. It was found that gamma irradiation decreases TSEE intensity and the area below TSEE spectral curves. A linear correlati…
Effect of electrolytical hydrogenation on the thermal stability and crystallization kinetics of METGLASS MBF-50
2007
The effect of electrolytical hydrogenation on both the surface and volume crystallization kinetics and thermal stability of amorphous alloy METGLASS MBF-50 has been investigated. The surface crystallization has been investigated by the exoelectron emission (EEE) technique, whereas the volume crystallization has been followed by differential thermal analysis (DTA). It has been found that both the surface and volume crystallization of investigated material occur in two stages. The surface crystallization occurs at temperature lower and with activation energy distinctly smaller than the volume crystallization. Hydrogenation of the investigated metallic glass enhances its thermal stability by i…
Kinetics of phase transitions in vitreous chalcogenide semiconductors AsxSe100m-x-yBiyas studied by the differential thermal analysis and exoelectron…
2011
Kinetics of glass transition (retrification) in chalcogenide semiconductors AsxSe100-x-yBy (x = 20 or 30, and y = 0 and 1) has been investigated by parallel differential thermal analysis (DTA) and exoelectron emission (EEE) measurements. EEE is a surface effect accompanying the structural transformations in the surface layer, whereas the DTA technique gives information about the transformations occurring in the volume of the sample. Temperature dependencies of the DTA signal and of the EEE intensity have been determined and the values of the activation energy for both the volume and the surface retrification have been determined by the Ozawa method for each of the four investigated material…
SURFACE AND VOLUME CRYSTALLIZATION OF METALLIC GLASS (Ni50Zr50)99.9P0.1 AS INVESTIGATED BY EXOELECTRON EMISSION (EEE) AND DIFFERENTIAL THERMAL ANALYS…
2002
Surface and volume crystallization of amorphous, melt-quenched (Ni50Zr50)99.9P0.1 alloy has been investigated by measurements of the temperature dependencies of the intensity of photostimulated exoelectron emission (EEE) and by differential scanning calorimetry (DSC). A comparison of these dependencies enables one to assess the tendency of the investigated materials to premature surface crystallization. For the (Ni50Zr50)99.9P0.1 alloy the surface crystallization occurs at temperatures distinctly lower than that for the crystallization in bulk. The activation energy for the surface crystallization, determined by the Ozawa method, i.e. from the shift of EEE peak corresponding to the surface…
Electron beam induced optical and electronical properties of SiO 2
2000
Abstract Ionizing radiation in dielectric and optically transparent silica as well as thin SiO 2 layers produces defect luminescence as well as charge storage. A comparison of different excitation–relaxation processes like cathodoluminescence, charge injection and trapping, secondary electron field emission, and exoelectron emission leads to a generally similar excitation dose behaviour described by an electron beam saturation dose of 0.01–0.1 C/cm 2 . This suggests a correlation of these four electron excitation mechanisms likely related to the same kind of defect in glassy SiO 2 , the 2-fold-coordinated silicon Si: centre with typical electronic singlet–singlet and singlet–triplet transit…
The kinetics of phase transitions in vitreous chalcogenide semiconductors As10.2Se89.8 and As9Se90Bi in early stage of physical ageing process
2013
The kinetics of glass transition in selenide glasses As10.2Se89.8 and As9Se90Bi in early stage of physical ageing process has been investigated by parallel differential scanning calorimetry (DSC) and exoelectron emission (EEE). It has been found that the glass transition process occurring in investigated glasses is evidenced by peaks on EEE intensity and DSC curves. Admixture of bismuth causes a distinct lowering of the temperature of glass transitions process both in the surface layer and in the volume. The addition of Bi causes a decrease in the value of the activation energy for glass transition process in both the volume and in the surface layer, thus reducing the thermal stability of i…
Structural transformations in amorphous selenium as studied by the differential thermal analysis and exoelectron emission technique
2007
The parameters (temperature, activation energy) of the surface and volume glass transition (retrification process) in amorphous selenium produced by rapid quenching of the liquid phase have been determined using the EEE and DTA techniques. EEE is a surface effect connected with structural transformations in the surface layer whereas the DTA measurements give the information about the transformations occurring in the volume of the sample. It has been found that the surface retrification of selenium occurs with activation energy smaller than the volume retrification, both observed in the first heating run. The value of activation energy for the volume retrification measured in the second DTA …
Phase transitions in some n-alkanes and petroleum waxes — investigation by photoacoustic and exoelectron emission techniques
2000
Abstract The use of the photoacoustic (PA) effect and photostimulated exoelectron emission (EEE) technique in the investigation of first- and second-order phase transitions in pure n -alkanes such as n -C 22 , n -C 28 and n -C 32 and in three petroleum waxes having different carbon number distributions, have been examined. Changes in the amplitude and phase of the PA signal with temperature and the temperature dependence of the intensity of photostimulated EEE across the phase transitions have been measured. These measurements have shown that both the polymorphic phase transitions and melting of these hydrocarbons are accompanied by jumps or peaks of the PA amplitude and phase and EEE inten…